Dual-Gate Organic Field-Effect Transistor for pH Sensors with Tunable Sensitivity

被引：39

作者：

Pfattner, Raphael ^{[1
]}

Foudeh, Amir M. ^{[1
]}

Chen, Shucheng ^{[1
]}

Niu, Weijun ^{[2
]}

Matthews, James R. ^{[2
]}

He, Mingqian ^{[2
]}

Bao, Zhenan ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

[2] Corning Inc, One River Front Plaza, Corning, NY 14831 USA

来源：

ADVANCED ELECTRONIC MATERIALS | 2019年 / 5卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

dual-gate organic field-effect transistors; pH sensors; silicon monoxide; tunable sensitivity; RUTILE-SOLUTION INTERFACE; POLYMER; MODEL; ADSORPTION; BLOOD; HYGROSCOPICITY; PERFORMANCE; MORPHOLOGY; STABILITY; TRANSPORT;

D O I：

10.1002/aelm.201800381

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dual-gate field-effect transistors (FETs) based on organic semiconductor polymer and SiOx as the topmost active sensing layer permit monitoring of pH in physiologically relevant conditions in a fast and reversible fashion. Beyond that, due to the bottom gate-induced field effect, such sensors exhibit tunable sensitivity and provide faster continuous measurements compared to conventional bulky glass bulb pH sensors. pH response of bare SiOx is evaluated independently by means of voltmeter measurements. When assembled in dual-gate architecture, the pH response of FET devices scales in agreement with the theoretical model, which assumes capacitive coupling, exhibiting an amplification of up to 10. This opens up the possibility for reversible and reliable sensing based on organic semiconductors well beyond pH sensors.

引用

页数：9

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