Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP

被引：3
|
作者：
Gasparotto, A
Cesca, T
Fraboni, B
Priolo, F
机构：
[1] Univ Padua, INFM, I-35131 Padua, Italy
[2] Univ Padua, Dept Phys, I-35131 Padua, Italy
[3] Univ Catania, INFM, I-95123 Catania, Italy
[4] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy
[5] Univ Bologna, INFM, I-40127 Bologna, Italy
[6] Univ Bologna, Dept Phys, I-40127 Bologna, Italy
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 340卷
关键词：
InP; ion implantation; electrical properties;
D O I：
10.1016/j.physb.2003.09.021
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Fe-related properties in high-temperature Fe implanted and annealed InP were studied by means of PIXE-RBS-channeling and correlated with the results of electrical (current-voltage) measurements. It is found that the point defect mobility, the concentration of substitutional Fe, and the resistivity of the implanted layer, all follow a similar temperature behavior. For annealing temperatures higher than 500degreesC semi-insulating behavior controlled by the Fe2+ deep levels is observed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：403 / 406
页数：4
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