Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP

被引：3
|
作者：
Gasparotto, A
Cesca, T
Fraboni, B
Priolo, F
机构：
[1] Univ Padua, INFM, I-35131 Padua, Italy
[2] Univ Padua, Dept Phys, I-35131 Padua, Italy
[3] Univ Catania, INFM, I-95123 Catania, Italy
[4] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy
[5] Univ Bologna, INFM, I-40127 Bologna, Italy
[6] Univ Bologna, Dept Phys, I-40127 Bologna, Italy
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 340卷
关键词：
InP; ion implantation; electrical properties;
D O I：
10.1016/j.physb.2003.09.021
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Fe-related properties in high-temperature Fe implanted and annealed InP were studied by means of PIXE-RBS-channeling and correlated with the results of electrical (current-voltage) measurements. It is found that the point defect mobility, the concentration of substitutional Fe, and the resistivity of the implanted layer, all follow a similar temperature behavior. For annealing temperatures higher than 500degreesC semi-insulating behavior controlled by the Fe2+ deep levels is observed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：403 / 406
页数：4
相关论文
共 50 条
  • [1] DEEP-LEVEL PROPERTIES OF MN IN INP
    HUANG, K
    WESSELS, BW
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) : 6882 - 6885
  • [2] DEEP-LEVEL TRAPPING IN ION-IMPLANTED INP JFETS
    KRUPPA, W
    BOOS, JB
    [J]. SOLID-STATE ELECTRONICS, 1995, 38 (10) : 1735 - 1741
  • [3] Deep level thermal evolution in Fe implanted InP
    Cesca, Tiziana
    Gasparotto, Andrea
    Piana, Erio
    Fraboni, Beatrice
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)
  • [4] Deep-level electroluminescence at 3.5 μm from semi-insulating InP layers ion implanted with Fe
    Troccoli, M
    Scamarcio, G
    Fraboni, B
    Priolo, F
    Gasparotto, A
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (01) : L1 - L3
  • [5] DEEP-LEVEL TRANSIENT SPECTROSCOPY AND ELECTRICAL CHARACTERIZATION OF ION-IMPLANTED P-N-JUNCTIONS INTO UNDOPED INP
    MARTIN, JM
    GARCIA, S
    MARTIL, I
    GONZALEZDIAZ, G
    CASTAN, E
    DUENAS, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) : 5325 - 5330
  • [6] Centers with low correlation energy in deep-level transient spectroscopy studies
    Yarykin, Nikolai
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (12)
  • [7] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON
    BROWER, KL
    [J]. PHYSICAL REVIEW B, 1982, 26 (11): : 6040 - 6052
  • [8] Ion beam analyses and electrical characterization of substitutional Fe properties in Fe implanted InP
    Cesca, T.
    Verna, A.
    Mattei, G.
    Gasparotto, A.
    Fraboni, B.
    Impellizzeri, G.
    Priolo, F.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 249 (1-2 SPEC. ISS.): : 894 - 896
  • [9] Structural, electrical and optical properties of MeV As+ ion implanted InP
    Carmody, C
    Tan, HH
    Jagadish, C
    Zou, J
    Dao, L
    Gal, M
    [J]. COMMAD 2002 PROCEEDINGS, 2002, : 487 - 490
  • [10] EFFECT OF HYDROGENATION ON DEEP-LEVEL TRAPS IN INP ON GAAS
    CHEN, YF
    SUNG, KC
    CHEN, WK
    LUE, YS
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 509 - 511
12345