Magnetic properties of manganese ferrite films grown at atomic scale

被引:18
|
作者
Zuo, X [1 ]
Yang, A
Yoon, SD
Christodoulides, JA
Harris, VG
Vittoria, C
机构
[1] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
[2] Nankai Univ, Coll Informat Tech Sci, Tianjin 300071, Peoples R China
[3] USN, Res Lab, Washington, DC 20375 USA
关键词
D O I
10.1063/1.1849072
中图分类号
O59 [应用物理学];
学科分类号
摘要
Manganese ferrite is a partial inverse spinet which, when prepared by conventional growth techniques, has similar to 20% of the Mn2+ ions on the octahedral sublattice. Here we describe a layer-by-layer growth scheme at atomic scale by which the percentage of Mn2+ ions on the octahedral sublattice can be artificially controlled. Manganese ferrite films grown by this technique exhibits different degrees of cation inversion when grown on {100} and {111} MgO substrates. It was observed that saturation magnetization varied in a wide range of values depending on chemical composition and oxygen pressure. Although bulk manganese ferrite was low anisotropy magnetic material, uniaxial anisotropy was observed at room temperature in the films deposited on {100} MgO substrates, and its magnitude and direction sensitively depended on chemical composition and oxygen pressure during deposition. (c) 2005 American Institute of Physics.
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页数:3
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