Frequency-dependent pulsed direct current magnetron sputtering of titanium oxide films

被引：12
|
作者：
Kim, JY [1 ]
Barnat, E [1 ]
Rymaszewski, EJ [1 ]
Lu, TM [1 ]
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2001年 / 19卷 / 02期
关键词：
D O I：
10.1116/1.1351064
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Dramatic dependence of dielectric properties on the pulsing frequency was found for titanium oxide films deposited using the pulsed de magnetron sputtering technique at room temperature. The frequency range studied was between 50 and 250 kHz by varying the oxygen pressure. A minimum leakage current density of 0.22 muA/cm(2) at 0.5 MV/cm electric-field strength for a film with dielectric constant of 26 was achieved for relative oxygen pressure P= 60% [P(%)= P(O2)/(P(O2) + P(Ar)] and frequency f= 200 kHz. (C) 2001 American Vacuum Society.
引用
收藏
页码：429 / 434
页数：6
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