Comprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasers

被引:17
|
作者
Man, WM [1 ]
Yu, SF [1 ]
机构
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong
关键词
interdiffusion; laser modeling; quantum-well semiconductor lasers; vertical-cavity surface-emitting lasers;
D O I
10.1109/2944.720484
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A numerical model for investigating the thermal, electrical, and optical characteristics of vertical-cavity surface-emitting lasers (VCSEL's) with a diffused quantum-well (QW) structure is presented. In the model, the quasi-three-dimensional (quasi-3-D) distribution of temperature, voltage and optical fields as well as the quasi-two-dimensional (quasi-2-D) diffusion and recombination of carrier concentration inside the QW active layer are calculated in a self-consistent manner. In addition, the quasi-3-D distribution of implanted ions before and after thermal annealing are computed. The variation of electrical conductivity and absorption loss as well as the influence of impurity induced compositional disordering on the optical gain and refractive index of the QW active layer are also taken into consideration, Using this model, the steady-state characteristics of diffused QW VCSEL's are studied theoretically. It is shown that significant improvement of stable single-mode operation can be obtained using diffused QW structure.
引用
收藏
页码:715 / 722
页数:8
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