Spin relaxation due to spin-orbit coupling in multi-electron quantum dots

被引：2

作者：

Climente, J. I. ^{[1
]}

Bertoni, A. ^{[1
]}

Goldoni, G. ^{[1
,2
]}

Rontani, M. ^{[1
]}

Molinari, E. ^{[1
,2
]}

机构：

[1] CNR, INFM, Natl Ctr NanoStruct & BioSyst Surfaces S3, I-41100 Modena, Italy

[2] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 06期

关键词：

quantum dots; spin-orbit; phonon scattering; many-body effects;

D O I：

10.1016/j.physe.2007.09.127

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual one- and two-electron devices. The physical mechanisms reducing SO admixture are discussed, and numerical results for realistic weakly confined GaAs/AlGaAs dots are reported. (c) 2007 Elsevier B.V. AD rights reserved.

引用

页码：1804 / 1806

页数：3

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