Spin relaxation due to spin-orbit coupling in multi-electron quantum dots

被引:2
|
作者
Climente, J. I. [1 ]
Bertoni, A. [1 ]
Goldoni, G. [1 ,2 ]
Rontani, M. [1 ]
Molinari, E. [1 ,2 ]
机构
[1] CNR, INFM, Natl Ctr NanoStruct & BioSyst Surfaces S3, I-41100 Modena, Italy
[2] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy
来源
关键词
quantum dots; spin-orbit; phonon scattering; many-body effects;
D O I
10.1016/j.physe.2007.09.127
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We show that the number of electrons confined in a semiconductor quantum dot has a strong influence over the Rashba and Dresselhaus spin-orbit (SO) admixture. This can be exploited to improve the lifetime of spin excitations, as compared to the usual one- and two-electron devices. The physical mechanisms reducing SO admixture are discussed, and numerical results for realistic weakly confined GaAs/AlGaAs dots are reported. (c) 2007 Elsevier B.V. AD rights reserved.
引用
收藏
页码:1804 / 1806
页数:3
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