E-beam pumped blue-green VCSEL based on ZnCdSe/ZnSe MQW structure grown by MBE on ZnSe substrate

ZnCdSe/ZnSe multiple quantum well structures (MQW) grown by molecular-beam epitaxy (MBE) on a ZnSe substrate have been studied. A vertical-cavity surface-emitting laser has been fabricated. The active medium consisted of the MQW structure and part of the substrate. The lasing action under longitudinal pump by a scanning electron beam with electron energy E-e from 40 to 70 keV has been obtained. The threshold current density was 60 A/cm(2) at T = 80 K and E-e = 65 keV. The output power was 0.15 W at lambda = 465 nm. The efficiency of the electron excitation and threshold carrier density were estimated. The cavity has exhibited lasing at T = 300 K only from ZnSe, owing to the fact that the optical gain occurred in the substrate. Some approaches to improve characteristics of lasers based on MQW structures grown on ZnSe substrates are discussed.