A 45.6-GHz matrix distributed amplifier in 0.18-μm CMOS

被引：0
|
作者：
Chen, TY [1 ]
Chien, JC [1 ]
Lu, LH [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan
来源：
CICC: PROCEEDINGS OF THE IEEE 2005 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a fully integrated matrix distributed amplifier fabricated in a standard 0.18-mu m CMOS process. With periodically loaded coplanar waveguides (CPW) as the synthetic transmission lines and cascode amplifiers as the gain cells, the 2x4 matrix amplifier is proposed to achieve a high gain over an extended frequency band. The fabricated circuit exhibits a gain of 6.7 dB with a 3-dB bandwidth of 45.6 GHz. Both input and output return losses are better than 10 dB within the entire frequency range. The chip size of the matrix amplifier is 1.8x1.05 mm(2) including the testing pads.
引用
收藏
页码：119 / 122
页数：4
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