Quantum well thermoelectric devices

被引：0

作者：

Ghamaty, S ^{[1
]}

Elsner, NB ^{[1
]}

机构：

[1] HiZ Technol Inc, San Diego, CA 92126 USA

来源：

THERMOELECTRIC MATERIALS 2003-RESEARCH AND APPLICATIONS | 2004年 / 793卷

关键词：

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper discloses the recent developments of high efficiency quantum well thermoelectrics at Hi-Z Technology, Inc. The performance of the latest P type B4C/B9C-N-type Si/SiGe couple will be presented as well as data for the new N-type Si/SiC that will replace Si/SiGe and improve couple efficiency. Preliminary calculations regarding the development of actual quantum well modules will be presented for power prediction. These modules can be used in future energy conversion system as well as air conditioning system designs. Our current efforts to produce quantum well films more rapidly will be discussed.

引用

页码：225 / 228

页数：4

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