Transient acceleration process of electrons in ZnS-type thin film electroluminescence devices

被引:0
|
作者
Zhao, H [1 ]
Wang, YS [1 ]
Xu, Z [1 ]
Xu, XR [1 ]
机构
[1] No Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The transient acceleration process of electrons in ZnS-type thin film electroluminescent devices is studied in detail for the first time through the Monte Carlo method. The transient time and drift length before the balance of acceleration and scattering are of the order of 200 fs and 30 nm respectively. The steady average kinetic energy of electrons increases with electric field. Field emission processes of electrons trapped at interface states only affect me transient process of electron transport and have no influence on the steady state. New explanations of the 'dead layer' phenomenon and the overshoot in the average drift velocity are proposed based on our calculation results.
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页码:2145 / 2151
页数:7
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