Spin Hall conductivity on the anisotropic triangular lattice

被引:2
|
作者
Wenk, P. [1 ]
Kettemann, S. [1 ,2 ]
Bouzerar, G. [1 ,3 ]
机构
[1] Jacobs Univ Bremen, Sch Sci & Engn, D-28759 Bremen, Germany
[2] Pohang Univ Sci & Technol POSTECH San31, Div Adv Mat Sci, Pohang 790784, South Korea
[3] CNRS, Inst Neel, F-38042 Grenoble 9, France
来源
PHYSICAL REVIEW B | 2012年 / 86卷 / 07期
关键词
ELECTRON GROUND-STATES; HUBBARD-MODEL; TOPOLOGICAL INVARIANT; BERRY PHASE; FERROMAGNETISM; CONDUCTANCE; SEMICONDUCTORS;
D O I
10.1103/PhysRevB.86.075441
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a detailed study of the spin Hall conductivity on a ballistic two-dimensional triangular lattice in the presence of Rashba spin-orbit coupling. In particular, we focus part of our attention on the effect of the anisotropy of the nearest neighbor hopping amplitude. It is found that the presence of anisotropy has drastic effects on the spin Hall conductivity, especially in the hole doped regime where a significant increase or/and reversed sign of the spin Hall conductivity has been obtained. We also provide a systematic analysis of the numerical results in terms of Berry phases. The changes of signs observed at particular density of carriers appear to be a consequence of both Fermi surface topology and change of sign of electron velocity. In addition, in contrast to the two-dimensional square lattice, it is shown that the tight binding spin-orbit Hamiltonian should be derived carefully from the continuous model on the triangular lattice.
引用
收藏
页数:8
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