Electrical Conduction Mechanisms of Thin Zinc-Oxide Films Prepared by RF Sputtering

被引：0

作者：

Zhang, Jiesheng ^{[1
]}

Saitoh, Tadashi ^{[2
]}

Omura, Yasuhisa ^{[1
]}

机构：

[1] Kansai Univ, Dept Elect & Elect Engn, 3-3-35 Yamate, Suita, Osaka 5648680, Japan

[2] Kansai Univ, Dept Pure & Appl Phys, Suita, Osaka 5648680, Japan

来源：

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2015年

关键词：

ZnO; oxygen vacancy; XPS; I-V characteristics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various ZnO films are deposited on p-type Si substrates overlaid with SiO2 surfaces. The ZnO films are deposited by an RF sputtering technique under ambient atmosphere of Ar gas or O-2/Ar mixture gas, followed by annealing at 700 C under O-2 or N-2. Atomic composition, chemical binding states, and electrical properties are analyzed. It is revealed that ambient gas for the sputtering process and the annealing process rules the electrical property.

引用

页数：2

共 50 条

[1] INDIUM-DOPED ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING
SHIH, I
QIU, CX
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2400 - 2401
[2] ELECTRICAL AND OPTICAL-PROPERTIES OF ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING FOR TRANSPARENT ELECTRODE APPLICATIONS
NANTO, H
MINAMI, T
SHOOJI, S
TAKATA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1029 - 1034
[3] ELECTRICAL-PROPERTIES OF GALLIUM-DOPED ZINC-OXIDE FILMS PREPARED BY RF-SPUTTERING
CHOI, BH
IM, HB
SONG, JS
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (05) : 1347 - 1350
[4] CONDUCTION MECHANISM OF HIGHLY CONDUCTIVE AND TRANSPARENT ZINC-OXIDE THIN-FILMS PREPARED BY MAGNETRON SPUTTERING
MINAMI, T
SATO, H
OHASHI, K
TOMOFUJI, T
TAKATA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 370 - 374
[5] SUBSTRATE BIASED RF SPUTTERING OF ZINC-OXIDE FILMS
MURTI, DK
[J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 308 - 314
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MINAMI, T
NANTO, H
TAKATA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L605 - L607
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MINAMI, T
SATO, H
NANTO, H
TAKATA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10): : L781 - L784
[8] HIGHLY CONDUCTIVE AND TRANSPARENT SILICON DOPED ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING
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SATO, H
NANTO, H
TAKATA, S
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[9] ELECTRONIC-PROPERTIES OF ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING FOR VARISTOR APPLICATIONS
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HASSAN, AK
MAHMOOD, FS
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1994, 76 (05) : 895 - 901
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NANTO, H
TAKATA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (05): : L280 - L282

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