INFLUENCE OF THE ALKALI SURFACE TREATMENTS ON THE INTERFACE-STATES DENSITY AND MINORITY CARRIER LIFETIME IN Cz-SILICON WAFER

被引:1
|
作者
Maoudj, M. [1 ,2 ]
Bouhafs, D. [1 ]
Bourouba, N. [2 ]
El Amrani, A. [1 ]
Boufnik, R. [1 ]
Berouaken, M. [1 ]
Hamida-Ferhat, A. [2 ]
机构
[1] Res Ctr Semicond Technol Energet CRTSE, 02 Bd Frantz Fanon Alger,BP 140,Les 07, Algiers, Algeria
[2] Ferhat Abbas Univ, Dept Elect, Fac Technol, Setif, Algeria
关键词
Interface states; alkaline solutions; minority carrier lifetime; SCHOTTKY BARRIERS; CONDUCTANCE; DIODES;
D O I
10.1142/S0218625X19500070
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The chemical etching of the surface of silicon wafers is a critical step in the manufacturing process of all semiconductor devices. In this contribution, we investigate the effect of alkaline etching on minority carrier lifetime and interface-states density (D-it) of silicon wafers intended to be used as solar cell substrates. After alkali treatment, the surface morphology was analyzed using scanning electron microscopy (SEM) and UV-visible-NIR optical spectroscopy. Besides and as electrical characterizations, the minority charge carrier lifetime (tau(n)) was measured by the Quasi-Steady State Photoconductance technique (QSSPC), and the Electrochemical Impedance Spectroscopy was used to evaluate D-it. These results were correlated with the surface recombination velocity (SRV) calculated by fitting the experimental data to the theory. The results of characterization showed a lower SRV and a higher apparent lifetime (tau(app) thorn obtained with 23 wt.% KOH etching as compared to those obtained with 30 wt.% NaOH; viz. 825 cm.s(-1) against 1500 cm.s(-1) and 32 mu s against 23 mu s, respectively. These findings were corroborated by D-it measurements which gave 1.55 x 10(11) ev(-1)cm(-2) for KOH treatment and 5.67 x 10(12) ev(-1)cm(-2) for NaOH treatment.
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页数:7
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