Influence of oxygen and oxygen related defects on the minority carrier lifetime of high purity CZ and MCZ silicon

被引：0
|
作者：
Porrini, M [1 ]
Gambaro, D [1 ]
Geranzani, P [1 ]
Falster, R [1 ]
机构：
[1] MEMC ELECT MAT SPA,I-28100 NOVARA,ITALY
来源：
PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON | 1996年 / 96卷 / 13期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：170 / 179
页数：10
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