Characterization of the Oxygen Ionosorption Effect on a Single SnO2 Nanowire by Using Conductive Atomic Force Microscopy

We have verified that SnO2 nano-wire has an n-type semiconductor property and it can be a p-type one when it is exposed to O-2. We employed conductive AFM system to measure the I-V curve and resistance of single SnO2 nano-wire which had been synthesized on the Au thin film by a thermal process. To analyze a effect of O-2 ionosorption into nano-wire, resistance was measured with various O-2 concentration and we observed increment and maintenance of resistance which caused by O-2 ionosorption. Also, the O-2 ionosorption causes a type transfer of semiconductor and this phenomenon was verified by comparing the Schottky property of nano-wire before and after O-2 exposure.