Dependence of structural and optoelectrical properties on the composition of electron beam evaporated ZnxCd1-xS thin films

Thin films of ZnxCd1-xS have been prepared by electron beam evaporation of a mixture of ZnS & CdS powders. The films are deposited onto sodalime glass slides under similar conditions. The composition of the films is varied from CdS to ZnS (x=0 to 1). The films show a regular change in color from toner red to orange yellow as Zn concentration increases to maximum. These films are characterized for their optical, electrical and structural properties. The bandgap value of ZnxCd1-xS films is found to vary linearly from 2.20 eV to 3.44 eV with change in the x value from 0 to 1. The resistivity of these films is in the range of 171.0 Omega cm to 5.5 x 10(6) Omega cm for x=0 similar to 0.6. All the samples show cubic structure after annealing in air at 250 degrees C for 40 min. The lattice constant a(0) varies from 0.5884 nm to 0.54109 nm linearly.