ZNXCD1-XS THIN-FILMS GROWN BY ION-BEAM DEPOSITION

被引：18
|
作者：
KUROYANAGI, A
机构：
[1] Department of Electronic Engineering, Noukai University of Technology, Sagamihara, Kanagawa, 229
来源：
THIN SOLID FILMS | 1994年 / 249卷 / 01期
关键词：
D O I：
10.1016/0040-6090(94)90091-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of ZnxCdl-xS were grown by ion-beam deposition on glass substrates. ZnxCdl-xS films with the c axis aligned perpendicular to the substrate and with high transmittance were obtained at a low substrate temperature of 70 degrees C. Although the properties of ZnxCdl-xS films greatly depend on substrate temperature and the composition parameter x, the optical bandgap and resistivity of the films are expressed systematically as a function of the film's composition parameter x(f), which is determined by the (002) lattice constant following Vegard's law. The optical bandgap of ZnxCdl-xS films varies from 2.42eV for CdS to 3.60eV for ZnS at substrate temperatures of 70-350 degrees C with x(f). The resistivity of films doped with indium varies from 10(-2) to 10(2) Omega cm with x(f) values of 0-0.4.
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页码：91 / 94
页数：4
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