The physics of conductivity at terahertz frequencies

被引：0
|
作者：
Kirley, Matt P. [1 ]
Booske, John H. [1 ]
机构：
[1] Univ Wisconsin, Elect & Comp Engn Dept, Madison, WI 53706 USA
来源：
2015 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC) | 2015年
关键词：
terahertz; conductivity; dissipation; surface roughness; Drude; Hammerstad;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effective terahertz (THz) component and systems design requires accurate predictive models for the frequency-dependent conductivity of materials. We have measured the THz conductivity of metals (including rough surface effects) and doped silicon at 0.4 - 0.85 THz. After a comprehensive analysis, we conclude that the THz-regime conductivity of highly-doped Si is accurately described by Drude theory, while metal conductivity is accurately described by a combination of measured DC conductivity, Drude theory, and the Hammerstad-Bekkadal formula.
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页数：2
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