Magnetoelectric control of domain walls in a ferrite garnet film

被引：83
|
作者：
Logginov, A. S. [1 ]
Meshkov, G. A. [1 ]
Nikolaev, A. V. [1 ]
Pyatakov, A. P. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119992, Russia
来源：
JETP LETTERS | 2007年 / 86卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
75.70.-i; 75.80.+q;
D O I：
10.1134/S0021364007140093
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A displacement of magnetic domain walls under the effect of an electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) orientation). The displacement of the domain walls changes to the opposite when the electric field changes sign, and it is independent of the direction of magnetization in the domains. The mechanism proposed for explaining the observed phenomenon is based on the inhomogeneous magnetoelectric effect.
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页码：115 / 118
页数：4
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