General principles, advantages and drawbacks of pulsed laser deposition (PLD) technique for thin films preparation are briefly reviewed. The method is based on vacuum evaporation of material by intensive laser pulses and subsequent deposition of vapours on a substrate. The method is very promising for thin films preparation of complex composition materials. The deposition in non-inert (reactive) atmosphere is possible. Low volatility and refractory materials can be also deposited without decomposition. The application of PLD method for chalcogenide-based amorphous thin films preparation is also described and current state-of-the-art is reviewed. In the last time, the chalcogenide based waveguides, photoinduced effects, rare-earth doped chalcogenide films and different chalcogenide based sensors of complex composition have been prepared by PLD and studied most frequently.
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Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Huang, JP
Wang, LW
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机构:Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Wang, LW
Wen, J
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机构:Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Wen, J
Wang, YX
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机构:Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Wang, YX
Lin, CL
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机构:Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
Lin, CL
Östling, M
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机构:Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
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Dept. of Elec. Eng. and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, JapanDept. of Elec. Eng. and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, Japan
Suzuki, Akio
Furiki, Masanari
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Dept. of Elec. Eng. and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, JapanDept. of Elec. Eng. and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, Japan
Furiki, Masanari
Aoki, Takanori
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Dept. of Elec. Eng. and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, JapanDept. of Elec. Eng. and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, Japan
Aoki, Takanori
Matsushita, Tatsuhiko
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Dept. of Elec. Eng. and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, JapanDept. of Elec. Eng. and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, Japan
Matsushita, Tatsuhiko
Okuda, Masahiro
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Dept. of Physics and Electronics, College of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 593-8531, JapanDept. of Elec. Eng. and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-8530, Japan
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Natl Inst Technol, Dept Phys, Tiruchirappalli 620015, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Balakrishnan, G.
Kuppusami, P.
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Indira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Kuppusami, P.
Sairam, T. N.
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Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Sairam, T. N.
Thirumurugesan, R.
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Indira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Thirumurugesan, R.
Mohandas, E.
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Indira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
Mohandas, E.
Sastikumar, D.
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Natl Inst Technol, Dept Phys, Tiruchirappalli 620015, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India
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Indira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
Mishra, Maneesha
Kuppusami, P.
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Indira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
Kuppusami, P.
Singh, Akash
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Indira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
Singh, Akash
Ramya, S.
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Indira Gandhi Ctr Atom Res, Corros Sci & Technol Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
Ramya, S.
Sivasubramanian, V.
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Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India
Sivasubramanian, V.
Mohandas, E.
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Indira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, IndiaIndira Gandhi Ctr Atom Res, Phys Met Grp, Kalpakkam 603102, Tamil Nadu, India