Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (1120) direction

被引：29

作者：

Teisseyre, H ^{[1
]}

Skierbiszewski, C ^{[1
]}

Lucznik, B ^{[1
]}

Kamler, G ^{[1
]}

Feduniewicz, A ^{[1
]}

Siekacz, M ^{[1
]}

Suski, T ^{[1
]}

Perlin, P ^{[1
]}

Grzegory, I ^{[1
]}

Porowski, S ^{[1
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 16期

关键词：

D O I：

10.1063/1.1899258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar multiple quantum wells (MQWs) have been grown by plasma assisted molecular beam epitaxy on bulk GaN crystals oriented along the (1120) direction. The photoluminescence intensity of the nonpolar MQWs was significantly higher than that found for the polar samples, both at low (10 K) and room temperature. This is a consequence of the lack of built-in electric field in samples,,town along the (1120) direction. Clearly resolved spectra of the excitons have been observed in the studied MQWs. Studies of these excitonic structures, by means of polarization and temperature measurements enabled us to assign the observed lines to free and bound excitons in GaN quantum wells. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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