Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (1120) direction

被引：29

作者：

Teisseyre, H ^{[1
]}

Skierbiszewski, C ^{[1
]}

Lucznik, B ^{[1
]}

Kamler, G ^{[1
]}

Feduniewicz, A ^{[1
]}

Siekacz, M ^{[1
]}

Suski, T ^{[1
]}

Perlin, P ^{[1
]}

Grzegory, I ^{[1
]}

Porowski, S ^{[1
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 16期

关键词：

D O I：

10.1063/1.1899258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar multiple quantum wells (MQWs) have been grown by plasma assisted molecular beam epitaxy on bulk GaN crystals oriented along the (1120) direction. The photoluminescence intensity of the nonpolar MQWs was significantly higher than that found for the polar samples, both at low (10 K) and room temperature. This is a consequence of the lack of built-in electric field in samples,,town along the (1120) direction. Clearly resolved spectra of the excitons have been observed in the studied MQWs. Studies of these excitonic structures, by means of polarization and temperature measurements enabled us to assign the observed lines to free and bound excitons in GaN quantum wells. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 50 条

[1] Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates
Badcock, T. J.
Dawson, P.
Kappers, M. J.
McAleese, C.
Hollander, J. L.
Johnston, C. F.
Rao, D. V. Sridhara
Sanchez, A. M.
Humphreys, C. J.
APPLIED PHYSICS LETTERS, 2008, 93 (10)
[2] Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
Bubendorff, JL
Grandjean, N
Damilano, B
Troyon, M
JOURNAL OF CRYSTAL GROWTH, 2003, 247 (3-4) : 284 - 290
[3] Confined excitons in GaN-AlGaN quantum wells
Bigenwald, P
Lefebvre, P
Bretagnon, T
Gil, B
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 216 (01): : 371 - 374
[4] Exciton dynamics in nonpolar (1120) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
Onuma, T.
Chakraborty, A.
Haskell, B. A.
Keller, S.
Sota, T.
Mishra, U. K.
DenBaars, S. P.
Speck, J. S.
Nakamura, S.
Chichibu, S. F.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2082 - 2086
[5] Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells
Kudrawiec, R.
Gladysiewicz, M.
Dussaigne, A.
Teisseyre, H.
Bockowski, M.
Grzegory, I.
Suski, T.
Misiewicz, J.
Grandjean, N.
JOURNAL OF APPLIED PHYSICS, 2011, 109 (02)
[6] Luminescence of highly excited nonpolar α-plane GaN and AlGaN/GaN multiple quantum wells
Jursenas, S
Kuokstis, E
Miasojedovas, S
Kurilcik, G
Zukauskas, A
Chen, CQ
Yang, JW
Adivarahan, V
Khan, MA
ACTA PHYSICA POLONICA A, 2004, 105 (06) : 567 - 573
[7] Quantum beats of free and bound excitons in GaN
Kyhm, K
Taylor, RA
Ryan, JF
Aoki, T
Kuwata-Gonokami, M
Beaumont, B
Gibart, P
APPLIED PHYSICS LETTERS, 2001, 79 (08) : 1097 - 1099
[8] Recombination dynamics of free and bound excitons in bulk GaN
Monemar, B.
Paskov, P. P.
Bergman, J. P.
Toropov, A. A.
Shubina, T. V.
Usui, A.
SUPERLATTICES AND MICROSTRUCTURES, 2008, 43 (5-6) : 610 - 614
[9] Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN
Corfdir, P.
Dussaigne, A.
Teisseyre, H.
Suski, T.
Grzegory, I.
Lefebvre, P.
Giraud, E.
Ganiere, J. -D.
Grandjean, N.
Deveaud-Pledran, B.
JOURNAL OF APPLIED PHYSICS, 2012, 111 (03)
[10] Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate
Dworzak, M.
Stempel, T.
Hoffmann, A.
Franssen, G.
Grzanka, S.
Suski, T.
Czernecki, R.
Leszczynski, M.
Grzegory, I.
GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 825 - +

← 1 2 3 4 5 →