Controlled Doping of Large-Area Trilayer MoS2 with Molecular Reductants and Oxidants

被引：190

作者：

Tarasov, Alexey ^{[1
]}

Zhang, Siyuan ^{[2
,3
]}

Tsai, Meng-Yen ^{[1
]}

Campbell, Philip M. ^{[1
]}

Graham, Samuel ^{[4
]}

Barlow, Stephen ^{[2
,3
]}

Marder, Seth R. ^{[2
,3
]}

Vogel, Eric M. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

[4] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 07期

基金：

瑞士国家科学基金会; 美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; MOLYBDENUM-DISULFIDE; LAYER MOS2; GRAPHENE; EVOLUTION; STATES;

D O I：

10.1002/adma.201404578

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Highly uniform large-area MoS2 is chemically doped using molecular reductants and oxidants. Electrical measurements, photoemission, and Raman spectroscopy are used to study the doping effect and to understand the underlying mechanism. Strong work-function changes of up to +/- 1 eV can be achieved, with contributions from state filling and surface dipoles. This results in high doping densities of up to ca. 8 x 10(12) cm(-2).

引用

页码：1175 / 1181

页数：7

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