Strain-Enhanced Large-Area Monolayer MoS2 Photodetectors

被引:2
|
作者
Radatovic, Borna [1 ,2 ]
Cakiroglu, Onur [2 ]
Jadrisko, Valentino [1 ,3 ]
Frisenda, Riccardo [4 ]
Senkic, Ana [1 ]
Vujicic, Natasa [1 ]
Kralj, Marko [1 ]
Petrovic, Marin [1 ]
Castellanos-Gomez, Andres [2 ]
机构
[1] Inst Phys, Ctr Adv Laser Tech, Zagreb 10000, Croatia
[2] CSIC, Inst Ciencia Mat Madrid ICMM, Mat Sci Factory, Madrid 28049, Spain
[3] Phys Dept, Politecn Milano, I-20133 Milan, Italy
[4] Sapienza Univ Rome, Phys Dept, I-00185 Rome, Italy
基金
欧洲研究理事会;
关键词
MoS2; strain; strain sensor; photodetector; atomic forcemicroscopy; PL spectroscopy; photocurrent spectroscopy; LAYER MOS2; GRAPHENE; BAND; PHOTOLUMINESCENCE; TRANSITION; GENERATION;
D O I
10.1021/acsami.4c00458
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, we show a direct correlation between the applied mechanical strain and an increase in monolayer MoS2 photoresponsivity. This shows that tensile strain can improve the efficiency of monolayer MoS2 photodetectors. The observed high photocurrent and extended response time in our devices are indicative that devices are predominantly governed by photogating mechanisms, which become more prominent with applied tensile strain. Furthermore, we have demonstrated that a nonencapsulated MoS2 monolayer can be used in strain-based devices for many cycles and extensive periods of time, showing endurance under ambient conditions without loss of functionality. Such robustness emphasizes the potential of MoS2 for further functionalization and utilization of different flexible sensors.
引用
收藏
页码:15596 / 15604
页数:9
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