Low temperature growth of patterned ZnO nanowires and their field emission characteristics

被引：1
|
作者：
Zhang Yong-ai [1 ]
Lin Jin-yang [1 ]
Wu Chao-xing [1 ]
Guo Tai-Liang [1 ]
机构：
[1] Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350002, Peoples R China
来源：
MECHANICAL AND AEROSPACE ENGINEERING, PTS 1-7 | 2012年 / 110-116卷
关键词：
ZnO nanowires; Patterned growth; Field emissio; NANORODS;
D O I：
10.4028/www.scientific.net/AMM.110-116.1918
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
Uniformly distributed and quasi-perpendicular patterned ZnO nanowires were synthesized on Ag electrodes coated Si substrate by thermal evaporation. Field emission (FE) measurements show that its turn-on field is 3.65V/mu m at current density of 10 mu A/cm2 and its the threshold field at current density of 1mA/cm2 is about 6.56 V/mu m at an emitter-anode gap of 400 mu m. and the fluctuation of FE current density is smaller than 10% for 3.5h at electric field of 6V/mu m. The low turn-on field and good stability indicates that it offers advantages as field emitter for much potential application.
引用
收藏
页码：1918 / 1922
页数：5
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