Growth dependence of reactively sputtered yttria-stabilized zirconia on Si(100), (110), (111) substrates

被引：12

作者：

Nagashima, M ^{[1
]}

Nakano, S ^{[1
]}

Sasaki, K ^{[1
]}

Hata, T ^{[1
]}

机构：

[1] Kanazawa Univ, Fac Engn, Dept Elect & Comp Engn, Kanazawa, Ishikawa 9208667, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 1AB期

关键词：

yttria-stabilized zirconia (YSZ); reactive sputtering; epitaxial growth; metallic mode; orientation;

D O I：

10.1143/JJAP.38.L74

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Yttria-stabilized zirconia (YSZ) thin films were grown on Si(100), (110) and (Ill)substrates by reactive magnetron sputtering. The deposition was performed in metallic mode using a Zr metal target arranged with Y plates and an aperture for the prevention of target oxidation. By reflection high energy electron diffraction (RHEED) and X-ray diffraction (XRD) analysis, YSZ is found to be epitaxially frown on Si (100) at a substrate temperature of 800 degrees C, indicated by sharp streaks in the RHEED pattern. On the other hand, YSZ films on Si(110) deposited at 600-800 degrees C were all polycrystalline. Although YSZ on Si(lll) showed strong orientational dependence on the substrate, its crystallinity seemed to be degraded by the generation of twin structures. This preferential growth orientation of YSZ was discussed by considering an arrangement of YSZ unit cells on Si substrates with various lattice orientations.

引用

页码：L74 / L77

页数：4

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