A study of the electronic structure of FeSe1-xTex chalcogenides by Fe and Se K-edge x-ray absorption near edge structure measurements

被引:55
|
作者
Joseph, B. [1 ]
Iadecola, A. [1 ]
Simonelli, L. [2 ]
Mizuguchi, Y. [3 ,4 ]
Takano, Y. [3 ,4 ]
Mizokawa, T. [5 ,6 ]
Saini, N. L. [1 ,6 ]
机构
[1] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy
[2] European Synchrotron Radiat Facil, F-38043 Grenoble 9, France
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[4] JST TRIP, Tsukuba, Ibaraki 3050047, Japan
[5] Univ Tokyo, Dept Phys, Chiba 2778561, Japan
[6] Univ Tokyo, Dept Complex Sci & Engn, Chiba 2778561, Japan
关键词
LOCAL-STRUCTURE; SUPERCONDUCTIVITY; TRANSITION; CRYSTAL;
D O I
10.1088/0953-8984/22/48/485702
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Fe K-edge and Se K-edge x-ray absorption near edge structure (XANES) measurements are used to study the FeSe1-xTex electronic structure of chalcogenides. An intense Fe K-edge pre-edge peak due to Fe 1s -> 3d (and admixed Se/Te p states) is observed, showing substantial change with Te substitution and x-ray polarization. The main white line peak in the Se K-edge XANES due to Se 1s -> 4p transition appears similar to the one expected for Se2- systems and changes with Te substitution. Polarization dependence reveals that unoccupied Se orbitals near the Fermi level have predominant p(x,y) character. The results provide key information on the hybridization of Fe 3d and chalcogen p states in the Fe-based chalcogenide superconductors.
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页数:5
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