Visible luminescence of porous amorphous Si1-xCx:: H due to selective dissolution of silicon

被引：8
|
作者：
Rerbal, K [1 ]
Jomard, F
Chazalviel, JN
Ozanam, F
Solomon, I
机构：
[1] Ecole Polytech, CNRS, Phys Mat Condensee Lab, F-91128 Palaiseau, France
[2] CNRS, Lab Phys Solide & Cristallogenese, F-92195 Meudon, France
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 01期
关键词：
D O I：
10.1063/1.1589180
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Room-temperature photoluminescence of porous hydrogenated amorphous silicon-carbon alloys (a- Si1-xCx : H) has been studied for different carbon concentrations. Porous a- Si1-xCx : H luminesces at energies much higher than the bulk material. Secondary ion mass spectroscopy reveals that the carbon content is higher in the porous layer than in the starting material, which accounts for the blueshifting of the luminescence into the visible range. (C) 2003 American Institute of Physics.
引用
收藏
页码：45 / 47
页数：3
相关论文
共 50 条
  • [31] 微晶Si1-xCx:F:H薄膜X衍射和XPS研究
    郑承志
    固体电子学研究与进展, 1993, (03) : 216 - 220
  • [32] Evaluation of degradation due to electron irradiation of Si1-xCx S/D n-type MOSFETs
    Hori, Masato
    Asai, Yuki
    Yoneoka, Masashi
    Tsunoda, Isao
    Takakura, Kenichiro
    Nakashima, Toshiyuki
    Gonzalez, Mireia Bargallo
    Simoen, Eddy
    Claeys, Cor
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1197 - +
  • [33] Green luminescence from Si1-xCx nanoparticles synthesized by laser annealing of Si nanoparticles and C60 thin films
    Kim, M. S.
    Kim, E. S.
    CURRENT APPLIED PHYSICS, 2009, 9 : S54 - S57
  • [34] Modification of the properties of amorphous hydrogenated silicon carbide a-Si1-xCx:H films as a result of annealing
    Babaev, AA
    Trapeznikova, IN
    Konkov, OI
    Terukov, EI
    SEMICONDUCTORS, 1996, 30 (04) : 389 - 390
  • [35] 氢化非晶硅碳薄膜(a—Si1-xCx:H)的红外分析
    张仿清
    刘智
    张南屏
    陈光华
    兰州大学学报, 1984, (01) : 19 - 24
  • [36] Characterization of amorphous carbon rich Si1-xCx thin films obtained using high energy hydrocarbon ion beams on Si
    Huck, H
    Halac, EB
    Oviedo, C
    Zampieri, G
    Pregliasco, RG
    Alonso, EV
    Reinoso, ME
    de Benyacar, MAR
    APPLIED SURFACE SCIENCE, 1999, 141 (1-2) : 141 - 147
  • [37] Optical and electrical properties of amorphous Si1 − xCx:H films
    B. A. Najafov
    G. I. Isakov
    Inorganic Materials, 2010, 46 : 624 - 630
  • [38] EFFECT OF THE BARRIER THICKNESS ON INTERFACE DEFECT DENSITY IN AMORPHOUS-SI-H AMORPHOUS-SI1-XCX-H MULTILAYERS
    WANG, F
    FISCHER, T
    SCHWARZ, R
    APPLIED PHYSICS LETTERS, 1994, 65 (22) : 2798 - 2800
  • [39] Preparation of amorphous Si1-xCx (0≤x≤1) films by alternate deposition of Si and C thin layers using a dual magnetron sputtering source
    Kikuchi, N
    Kusano, E
    Tanaka, T
    Kinbara, A
    Nanto, H
    SURFACE & COATINGS TECHNOLOGY, 2002, 149 (01): : 76 - 81
  • [40] Nano-crystalline Si1-xCx:H thin films deposited by PECVD for SiC-on-insulator application
    Forhan, NAE
    Fantini, MCA
    Pereyra, I
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 119 - 122
12345