In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

被引:15
|
作者
Franke, E [1 ]
Schubert, M
Hecht, JD
Neumann, H
Tiwald, TE
Thompson, DW
Yao, H
Woollam, JA
Hahn, J
机构
[1] Inst Surface Modificat, D-04303 Leipzig, Germany
[2] Univ Nebraska, Ctr Microelect & Opt Mat Res, Lincoln, NE 68588 USA
[3] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA
[4] Tech Univ Chemnits, Fac Sci, Inst Phys, D-09107 Chemnitz, Germany
关键词
D O I
10.1063/1.368083
中图分类号
O59 [应用物理学];
学科分类号
摘要
In situ infrared (IR) spectroscopy and visible-light (VIS) spectroscopic ellipsometry over the spectral range from 700 to 2000 cm(-1) and 1.5-3.5 eV, respectively, were used to investigate the optical behavior of boron nitride (BN) thin films at temperatures from room temperature (RT) to 600 degrees C. The polycrystalline hexagonal (h) and mixed-phase h- and cubic (c)-BN thin films were deposited by magnetron sputtering on [001] silicon. We observe a reversible moisture incorporation process in as-grown h-BN samples. When stored in normal ambient, the h-BN thin films absorb water into thin-film micropores. When annealed in ultrahigh vacuum or a dry nitrogen atmosphere, the samples expel moisture but retain their microstructure. This is observable by reduction of the thin-film refractive indices in accordance with changes in the IR lattice resonance behavior. The optical properties of high c-BN content thin films remain unchanged during annealing. And both intrinsic h- and c-BN thin-film VIS refractive indices are nearly temperature independent, at least up to 600 degrees C. Therefore, RT BN optical constants can be used for feedback loop control in in situ thin-film growth at temperatures up to 600 degrees C.
引用
收藏
页码:526 / 532
页数:7
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