Artificial synapses based on layered multi-component metal oxides

Neuromorphic electronics has received considerable attention recent years, and its basic functional units aresynaptic electronic devices. A two-terminal artificial synapse with sandwiched structure emulates plasticity ofthe biological synapses under the action of nerve-like electrical impulse signals. In this paper, P3 phaseNa2/3Ni1/3Mn2/3O2 multi-element metal oxides with layered structure are synthesized by sol-gel process. Owingto the fact that Na+ is easy to embed/eject into its crystal structure, an ion-migrating artificial synapse basedon Na2/3Ni1/3Mn2/3O2 is designed and fabricated. The device emulates important synaptic plasticity, such asexcitatory postsynaptic current, paired-pulse facilitation, spike-number dependent plasticity, spike-frequencydependent plasticity, spike-voltage amplitude dependent plasticity and spike-duration dependent plasticity. Thedevice realizes the identification and response to Morse code commands