Artificial synapse based on MoO3 nanosheets prepared by hydrothermal synthesis

被引:3
|
作者
Guo Ke-Xin [1 ]
Yu Hai-Yang [1 ]
Han Hong [1 ]
Wei Huan-Huan [1 ]
Gong Jiang-Dong [1 ]
Liu Lu [1 ]
Huang Qian [1 ]
Gao Qing-Yun [1 ]
Xu Wen-Tao [1 ]
机构
[1] Nankai Univ, Key Lab Photoelect Thin Film Devices & Technol Ti, Inst Photoelect Thin Film Devices & Technol, Tianjin 300350, Peoples R China
关键词
artificial synapse; hydrothermal synthesis; molybdenum trioxide nanosheets; synaptic plasticity; MOLYBDENUM TRIOXIDE; DEVICE; PLASTICITY; LAYER; MEMORY; MOS2;
D O I
10.7498/aps.69.20200928
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Recently, neuromorphic systems capable of parallel information processing have attracted increasing attention. A neuromorphic system is desired to emulate a human brain, which consists of hundreds of billions of neurons connected with even more synapses. Synapses are important connection parts between neurons to transmit information through release and reception of neurotransmitters. A neuromorphic system could replicate brain learning, cognition and computation of a human brain to process huge data with 10(16) floating point numbers per second. The high computing efficiency has attracted many researchers to study artificial synapses for application in future artificial intelligence. The synaptic weight could be adjusted by the received information. This provides a basis for the learning and computing capability of artificial synapses. So far, a number of semiconductor materials have been used in artificial synaptic devices, like some organic materials, e.g. Poly(3-hexylthiophene-2,5-diyl)(P3HT), [1]Benzothieno[3,2-b][1]benzothiophene, 2,7-dioctyl-(C8-BTBT) etc, some inorganic oxides such as zinc oxide, indium zinc oxide(IZO), indium gallium zinc oxide(IGZO), transition metal oxides, etc, and two-dimensional materials, e.g. graphene, black phosphorus, and organic-inorganic hybrid perovskite materials. Among them, transition metal oxides are attractive due to their unique layered structure and inherent properties, which are important in photohydrolysis, lithium ion batteries, and field-effect transistors. MoO3, as a typical transition-metal oxide, has been used in artificial synaptic devices, with different preparation methods, such as mechanical exfoliation, chemical vapor deposition (CVD) and chemical vapor transportation (CVT), pulse-laser deposition (PLD). Here, we report the preparation of a semiconductor layer of MoO3 nanosheets by hydrothermal method, and the use of a TiO2 nanoparticle seed layer to improve the adhesion of MoO3 nanosheets. This is a cost-effective and controllable process. The high surface-to-volume ratio of the material provides large contact area at the interface to allow easy ion diffusion. The device emulates important synaptic functions, such as excitatory post-synaptic current (EPSC), pairedpulse facilitation (PPF), spike-duration dependent plasticity (SDDP), spike-voltage dependent plasticity (SVDP) and spike-rate dependent plasticity (SRDP). This work could be an important addition to the neuromorphic research field.
引用
收藏
页数:7
相关论文
共 47 条
  • [1] Synaptic modification by correlated activity: Hebb's postulate revisited
    Bi, GQ
    Poo, MM
    [J]. ANNUAL REVIEW OF NEUROSCIENCE, 2001, 24 : 139 - 166
  • [2] Light-Stimulated Artificial Synapses Based on 2D Organic Field-Effect Transistors
    Fang, Lu
    Dai, Shilei
    Zhao, Yiwei
    Liu, Dapeng
    Huang, Jia
    [J]. ADVANCED ELECTRONIC MATERIALS, 2020, 6 (01)
  • [3] Semiconductor MoO3-TiO2 thin film gas sensors
    Galatsis, K
    Li, YX
    Wlodarski, W
    Comini, E
    Faglia, G
    Sberveglieri, G
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2001, 77 (1-2) : 472 - 477
  • [4] Metal oxide resistive random access memory based synaptic devices for brain-inspired computing
    Gao, Bin
    Kang, Jinfeng
    Zhou, Zheng
    Chen, Zhe
    Huang, Peng
    Liu, Lifeng
    Liu, Xiaoyan
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
  • [5] Han H., 2020, ADV INTELL SYST, V2
  • [6] A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
    Hsieh, Cheng-Chih
    Roy, Anupam
    Chang, Yao-Feng
    Shahrjerdi, Davood
    Banerjee, Sanjay K.
    [J]. APPLIED PHYSICS LETTERS, 2016, 109 (22)
  • [7] Partially nitrided molybdenum trioxide with promoted performance as an anode material for lithium-ion batteries
    Ji, Wenxu
    Shen, Rui
    Yang, Rong
    Yu, Guiyun
    Guo, Xuefeng
    Peng, Luming
    Ding, Weiping
    [J]. JOURNAL OF MATERIALS CHEMISTRY A, 2014, 2 (03) : 699 - 704
  • [8] 2D electric-double-layer phototransistor for photoelectronic and spatiotemporal hybrid neuromorphic integration
    Jiang, Jie
    Hu, Wennan
    Xie, Dingdong
    Yang, Junliang
    He, Jun
    Gao, Yongli
    Wan, Qing
    [J]. NANOSCALE, 2019, 11 (03) : 1360 - 1369
  • [9] Jiang S S, 2019, MODERN ELECT TECHNOL, V42, P181
  • [10] Nanoscale Memristor Device as Synapse in Neuromorphic Systems
    Jo, Sung Hyun
    Chang, Ting
    Ebong, Idongesit
    Bhadviya, Bhavitavya B.
    Mazumder, Pinaki
    Lu, Wei
    [J]. NANO LETTERS, 2010, 10 (04) : 1297 - 1301