A Nano power Voltage Reference Generator Using of Sub threshold MOSFETs

被引：0
|
作者：
Kushwaha, Dinesh [1 ]
Mishra, D. K. [1 ]
机构：
[1] SGSITS, Elect & Instrumentat Engn Dept, Indore, MP, India
来源：
2017 IEEE INTERNATIONAL CONFERENCE ON INFORMATION, COMMUNICATION, INSTRUMENTATION AND CONTROL (ICICIC) | 2017年
关键词：
Low power; Low voltage; power supply rejection ratio; Tepmerature coefficient; threshold voltage; Sub threshold; SUBTHRESHOLD MOSFETS; REFERENCE CIRCUIT; PPM/DEGREES-C;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
A Nano power CMOS voltage generator circuit has been implemented using a 0.18 mu m standard CMOS process technology. The circuit has MOSFETs operated in sub threshold region without resistor. It works on the concept of temperature compensation of threshold voltage. It generate 212mV output reference voltage in supply voltage range 0.8-1.8V.The temperature coefficient of voltage was 256ppm/degrees C in temperature range 0 -150 degrees C. The line sensitivity was 15%/V in the operating voltage range 0.8 - 1.8 V, and power supply rejection ratio (PSRR) was -42dB at 100 Hz and -35dB at 10 MHz.
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页数：5
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