Characterization of the isothermal solidification process in the Ni/Au-Ge layer system

被引:8
|
作者
Weyrich, Nico [1 ]
Leinenbach, Christian [1 ]
机构
[1] Empa Swiss Fed Labs Mat Sci & Technol, Lab Joining Technol & Corros, CH-8600 Dubendorf, Switzerland
关键词
TRANSIENT-LIQUID-PHASE; DIFFERENTIAL SCANNING CALORIMETRY; CU-SN SYSTEM; CU/NB/CU INTERLAYERS; NI SYSTEM; DIFFUSION; KINETICS; ALUMINA; GROWTH; JOINTS;
D O I
10.1007/s10853-015-8952-x
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The eutectic Au28Ge (at.%) solder alloy in combination with Ni substrates or Ni coatings is interesting for applications in transient liquid phase (TLP) bonding. To achieve sound joints with high re-melting temperatures, it is necessary to gain profound knowledge about the joining process. In this work, the isothermal solidification behavior in the Ni-Au28Ge (at.%) system was analyzed by means of microstructure evolution and time to complete solidification. In short-time annealing experiments the early stage of the reaction (< 300 s over liquidus temperature) was investigated. It was observed that a continuous layer of Ni5Ge3 forms at the substrate-solder interface before scallop-like NiGe grains start to grow as solidification proceeds. Cyclic differential scanning calorimetry measurements were applied to estimate the time to complete solidification. Solidification was completed after less than 1 h in the Ni-Au28Ge (at.%) system, which enables comparably short processing times for TLP bonding.
引用
收藏
页码:3835 / 3844
页数:10
相关论文
共 50 条
  • [21] Wafer level package of Au-Ge system using a Ge chemical vapor deposition (CVD) thin film
    Choi, Kyeong-Keun
    Hosseini, Nazanin
    Kee, Jong
    Kim, Sung-Kyu
    Park, Chan-Gyung
    APPLIED SURFACE SCIENCE, 2016, 385 : 122 - 129
  • [23] The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters
    Ozdemir, A. F.
    Ozsoy, T.
    Kansiz, Y.
    Sancak, M.
    Kokce, A.
    Ucar, N.
    Aldemir, D. A.
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 60 (01): : 10101-p1 - 10101-p5
  • [24] Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces
    Rath, A.
    Dash, J. K.
    Juluri, R. R.
    Schowalter, Marco
    Mueller, Knut
    Rosenauer, A.
    Satyarn, P. V.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (10)
  • [25] CHARACTERISTICS OF ION-BEAM MIXED AND ALLOYED AU-GE/NI OHMIC CONTACTS TO N-GAAS
    BARNARD, WO
    STRYDOM, HJ
    KRUGER, MM
    SCHILDHAUER, C
    LACQUET, BM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 35 (3-4): : 238 - 243
  • [26] Development, characterization and interface analysis of interconnections based on an isothermal solidification process
    Khanna, PK
    Bhatnagar, SK
    Chang, LS
    Gust, W
    ZEITSCHRIFT FUR METALLKUNDE, 1999, 90 (07): : 470 - 474
  • [27] 在N型GaAs上Ni/Au-Ge合金膜的冶金和电学性能
    G·Y·Bobinson
    杨跃中
    半导体情报, 1975, (10) : 31 - 44
  • [28] Development, Characterization and Interface Analysis of Interconnections Based on an Isothermal Solidification Process
    Khanna, P.K.
    Bhatnagar, S.K.
    Chang, L.-S.
    Gust, W.
    International Journal of Materials Research, 1999, 90 (07): : 470 - 474
  • [29] Development, characterization and interface analysis of interconnections based on an isothermal solidification process
    Ctrl. Electronics Eng. Res. Inst., Pilani, India
    不详
    不详
    不详
    Z Metallkd, 7 (470-474):
  • [30] Electrical Characterization of In/p-GaSe:Cd/Au-Ge Single Crystal Grown by Bridgman/Stockbarger Method
    Gurbulak, Bekir
    Sata, Mehmet
    Ashkhasi, Afsoun
    Yildirim, Muhammet
    Duman, Songul
    PROCEEDINGS OF THE TURKISH PHYSICAL SOCIETY 32ND INTERNATIONAL PHYSICS CONGRESS (TPS32), 2017, 1815