Simulation of defects formation in nanotubes under ion irradiation

被引：5
|
作者：
Shemukhin, A. A. [1 ]
Stepanov, A. V. [2 ]
Nazarov, A. V. [1 ]
Balakshin, Yu. V. [1 ]
机构：
[1] Lomonosov Moscow State Univ, Skobeltsyn Inst Nucl Phys, Moscow, Russia
[2] Chuvash State Agr Acad, Cheboksary, Russia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2019年 / 460卷
基金：
俄罗斯科学基金会;
关键词：
Ion irradiation; Multiwall carbon nanotube; Defects; Molecular dynamics; GAS-SENSING PROPERTIES; CARBON NANOTUBES; ENERGY; ENHANCEMENT; SENSORS;
D O I：
10.1016/j.nimb.2019.03.055
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Thermal mechanism of ion irradiated multiwall carbon nanotube amorphization was verified by molecular dynamic simulation. The results comparable to experiment were obtained in the MD simulation. The simulation results show that one of the possible mechanisms of carbon nanotubes amorphization during ion bombardment is thermal heating.
引用
收藏
页码：230 / 233
页数：4
相关论文
共 50 条
  • [31] Nanorelief Formation under Ion Irradiation of Germanium and Silicon Surfaces
    Chernysh, V. S.
    Patrakeev, A. S.
    Soldatov, E. S.
    Petrov, D. V.
    Alyshev, S. V.
    JOURNAL OF SURFACE INVESTIGATION, 2007, 1 (06): : 717 - 721
  • [32] The formation of bubbles in Zr alloys under Kr ion irradiation
    Pagano, L
    Motta, AT
    Birtcher, RC
    JOURNAL OF NUCLEAR MATERIALS, 1997, 244 (03) : 295 - 304
  • [33] Stability and formation of NiAl3 under ion irradiation
    Nastasi, M.
    Johnson, H. H.
    Mayer, J. W.
    Williams, J. M.
    JOURNAL OF MATERIALS RESEARCH, 1986, 1 (02) : 268 - 274
  • [34] Two mechanisms of nanocrystals formation under ion irradiation of silicon
    Ezhevskii, A. A.
    Tetelbaum, D. I.
    Mendeleva, Yu. A.
    Guseinov, D. V.
    Kiseleva, E. V.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 (1-2 SPEC. ISS.): : 68 - 70
  • [35] Formation of diamond in carbon onions under MeV ion irradiation
    Wesolowski, P
    Lyutovich, Y
    Banhart, F
    Carstanjen, HD
    Kronmuller, H
    APPLIED PHYSICS LETTERS, 1997, 71 (14) : 1948 - 1950
  • [36] Nanorelief formation under ion irradiation of germanium and silicon surfaces
    V. S. Chernysh
    A. S. Patrakeev
    E. S. Soldatov
    D. V. Petrov
    S. V. Alyshev
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2007, 1 : 717 - 721
  • [37] Features of Defect Formation in Nanostructured Silicon under Ion Irradiation
    Kozhemiako, A. V.
    Evseev, A. P.
    Balakshin, Yu. V.
    Shemukhin, A. A.
    SEMICONDUCTORS, 2019, 53 (06) : 800 - 805
  • [38] Features of Defect Formation in Nanostructured Silicon under Ion Irradiation
    A. V. Kozhemiako
    A. P. Evseev
    Yu. V. Balakshin
    A. A. Shemukhin
    Semiconductors, 2019, 53 : 800 - 805
  • [39] Formation of ion irradiation induced small-scale defects on graphite surfaces
    Nordlund, K
    Keinonen, J
    Mattila, T
    PHYSICAL REVIEW LETTERS, 1996, 77 (04) : 699 - 702
  • [40] Transformation of multiwalled carbon nanotubes to amorphous carbon nanorods under ion irradiation
    Honda, Shin-ichi
    Tamura, Ryosuke
    Nosho, Yusuke
    Tsukagoshi, Akira
    Niibe, Masahito
    Terasawa, Mititaka
    Hirase, Ryuji
    Izumi, Hirokazu
    Yoshioka, Hideki
    Niwase, Keisuke
    Taguchi, Eiji
    Lee, Kuei-Yi
    Oura, Masaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (02)
12345