Photoluminescence Properties of Non-Tapered InN Nanorods Grown by Plasma-Assisted Metalorganic Chemical Vapor Phase Deposition

被引：0

作者：

Seo, H. W. ^{[1
]}

Norman, Dever P. ^{[1
]}

Yuan, L. ^{[1
]}

Tu, L. W. ^{[2
,3
]}

Chiang, S. Y. ^{[2
,3
]}

机构：

[1] Univ Arkansas, Dept Phys & Astron, Little Rock, AR 72204 USA

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2010年 / 10卷 / 10期

关键词：

InN; Nanorods; Nanowires; MOCVD; PA-MOCVD; Photoluminescence; TEMPERATURE-DEPENDENCE; INDIUM; ENERGY; GAN;

D O I：

10.1166/jnn.2010.2995

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have successfully grown non-tapered InN nanorods on Si substrate using an RF plasma assisted metalorganic chemical vapor deposition technique. Employment of 50 W nitrogen plasma reduces the optimal growth temperature to 500 degrees C. In order to study the temperature dependent bandgap and thermal quenching mechanism in relation to the localized states, photoluminescence measurement over a temperature range from 7 to 160 K are conducted. The photoluminescence at 7 K shows a strong near-band-emission energy of 0.682 eV with a narrow band width of 0.027 eV, which reveals excellent optical and structural qualities of the InN nanorods.

引用

页码：6783 / 6786

页数：4

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