Direct Detection of Hole Gas in Ge-Si Core-Shell Nanowires by Enhanced Raman Scattering

被引：30
|
作者：
Zhang, Shixiong [1 ]
Lopez, Francisco J. [1 ]
Hyun, Jerome K. [1 ]
Lauhon, Lincoln J. [1 ]
机构：
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
来源：
NANO LETTERS | 2010年 / 10卷 / 11期
关键词：
Nanowire; heterostructure; Raman scattering; Fano resonance; SEMICONDUCTOR NANOWIRES; HETEROSTRUCTURES; IMPURITIES; STRAIN; GROWTH;
D O I：
10.1021/nl102316b
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report the direct detection of hole accumulation in the core of Ge-Si core-shell nanowire heterostructures by a Fano resonance between free holes and the F-2g mode in Raman spectra. Raman enhancements of 10- 10 000 with respect to bulk were observed and explained using finite difference time domain simulations of the electric fields concentrated in the nanowire. Numerical modeling of the radial carrier concentration revealed that the asymmetric line-shape is strongly influenced by inhomogeneous broadening.
引用
收藏
页码：4483 / 4487
页数：5
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