Separate absorption and modulation Mach-Zehnder wavelength converter

被引：11

作者：

Tauke-Pedretti, Anna ^{[1
]}

Dummer, Matthew M. ^{[1
]}

Sysak, Matthew N. ^{[1
,2
]}

Barton, Jonathon S. ^{[1
]}

Klampkin, Jonathan ^{[3
]}

Raring, James W. ^{[3
,4
]}

Coldren, Larry A. ^{[1
,3
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

[3] Univ Calif Santa Barbara, Dept Elect Mat, Santa Barbara, CA 93106 USA

[4] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2008年 / 26卷 / 1-4期

关键词：

Mach-Zehnder modulator; offset quantum wells; optical modulation; photonic integrated circuits (PICs); sampled-grating DBR laser (SGDBR); semiconductor optical amplifier (SOA); tunable lasers; wavelength converter;

D O I：

10.1109/JLT.2007.913020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic separate absorption and moduation region (SAM) wavelength converter is demonstrated. The transmitter consists of a sampled-grating DBR (SGDBR) laser and a series-push-pull Mach-Zehnder modulator. The preamplified receiver is composed of a flared semiconductor optical amplifier and a quantum-well pin photodetector. Integrated resistors and capacitors are used to minimize microwave losses and remove the need for external bias tees. The design, fabrication, and operation of this photonic integrated circuit is presented. Small-signal response measurements show a device bandwidth in excess of 20 GHz. Operation at 40 Gbps with NRZ data shows less than a 2.5-dB power penalty across the 32-nm laser tuning range with no additional power penalty for conversion to the input wavelength.

引用

页码：91 / 98

页数：8

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