Growth and characterization of self-assembled InGaAs/InGaP quantum dots for mid-infrared photoconductive detector by LP-MOCVD

被引：0
|
作者：
Kim, S [1 ]
Razeghi, M [1 ]
机构：
[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON LONG WAVELENGTH INFRARED DETECTORS AND ARRAYS: PHYSICS AND APPLICATIONS | 1999年 / 98卷 / 21期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We report InGaAs quantum dot intersubband infrared photoconductive detectors grown by low-pressure metal organic chemical vapor deposition (MOCVD) on semi-insulating GaAs substrates. The InGaAs quantum dots were constructed on InGaP matrix and the optimum growth conditions were investigated. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 mm with a high responsivity of 130mA/W at 77K, and a detectivity of 4.74 x 10(7) cm Hz(1/2)/W at 77K, Low temperature intersubband photoresponse was also observed from the quantum dots grown on Si substrate.
引用
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页码：219 / 226
页数：8
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