A novel method for investigating optically stimulated luminescence in scintillators

被引:1
|
作者
Jensen, Mads L. [1 ]
Turtos, Rosana M. [1 ]
Julsgaard, Brian [1 ,2 ]
Schulz, Volkmar [3 ,4 ,5 ]
Balling, Peter [1 ,2 ]
Gundacker, Stefan [3 ]
机构
[1] Aarhus Univ, Dept Phys & Astron, Ny Munkegade 120, DK-8000 Aarhus, Denmark
[2] Aarhus Univ, Interdisciplinary Nanosci Ctr, Gustav Wieds Vej 14, DK-8000 Aarhus, Denmark
[3] Rhein Westfal TH Aachen, Inst Expt Mol Imaging, Dept Phys Mol Imaging Syst, Forckenbeckstr 55, D-52074 Aachen, Germany
[4] Rhein Westfal TH Aachen, Phys Inst B 3, Otto-Blumenthal-Str, D-52074 Aachen, Germany
[5] Fraunhofer Inst Digital Med MEVIS, Forckenbeckstr 55, D-52074 Aachen, Germany
关键词
Optically stimulated luminescence; Scintillation; Scintillator characterization; Dosimetry; LYSO; Ce; OSL; RAY;
D O I
10.1016/j.jlumin.2022.119237
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Optically stimulated luminescence (OSL) is a known property in many scintillators, and investigating the branching ratio of thermalized carriers to this photon-emission mechanism could aid both scintillator develop-ment and OSL-based dosimetry. We present a novel method for determining the branching ratio of thermalized carriers to OSL in scintillators while monitoring the energy deposition from 511 keV gamma photons on an event -by-event basis. We demonstrate the method using a cerium-doped lutetium oxyorthosilicate (LYSO:Ce) crystal, and validate that the observed signal indeed originates from OSL photons by estimating the lifetime of the OSL traps, which is consistent with values found in the literature. We report a branching ratio of thermalized carriers to the OSL traps in LYSO:Ce of (1.0 +/- 0.2)% upon excitation with 511 keV gamma photons, using a one-trap-one -recombination-center model.
引用
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页数:6
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