SXPS study of model GaAs(100)/electrolyte interface

被引：4
|
作者：
Lebedev, Mikhail V. [1 ]
Mankel, Eric [2 ]
Mayer, Thomas [2 ]
Jaegermann, Wolfram [2 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia
[2] Tech Univ Darmstadt, Inst Sci Mat, D-64287 Darmstadt, Germany
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 2 | 2010年 / 7卷 / 02期
关键词：
GAAS(100) SURFACES; SEMICONDUCTOR/ELECTROLYTE INTERFACES; HCL; SPECTROSCOPY; PHOTOEMISSION; GAAS(111)A; PASSIVATION; SOFTNESS; SOLVENTS; HARDNESS;
D O I：
10.1002/pssc.200982439
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Model GaAs(100)/electrolyte interfaces are prepared in vacuum by co-adsorption of Cl-2 and 2-propanol molecules at LN2 temperature. On adsorption of Cl-2 molecules gallium chlorides, elemental arsenic and arsenic chlorides are formed. Co-adsorption of 2-propanol causes formation of additional GaCl3 and AsCl, as well as soluble/volatile As-based complexes, which are released from the surface depleting the sur-face by arsenic. Comparison of the As 3d and Ga 3d spectra obtained after heating the model interface to room temperature with the corresponding spectra obtained after emersion of the GaAs(100) surface from HCl/2-propanol solution allows to conclude that in HCl solution Cl-ions attack gallium sites and H+ ions mostly attack arsenic sites. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：193 / 196
页数：4
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