Rigorous S-matrix approach to the modeling of the optical properties of OLEDs

被引：10
|
作者：
Shcherbakov, A. A. [2 ,3 ]
Tishchenko, A. V. [2 ,3 ]
Setz, D. S. [1 ]
Krummacher, B. C. [1 ]
机构：
[1] OSRAM Opto Semicond GmbH, OLED Lighting, Regensburg, Germany
[2] Univ Lyon, Lab Hubert Curien, UMR CNRS 5516, St Etienne, France
[3] Moscow Inst Phys & Technol, Lab Nanoopt & Femtosecond Elect, Dolgoprudnyi, Russia
来源：
ORGANIC ELECTRONICS | 2011年 / 12卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
Organic light-emitting diodes; Optical simulation; Loss-channel analysis; LIGHT-EMISSION; DEVICES; RADIATION; SYSTEM;
D O I：
10.1016/j.orgel.2011.01.019
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new approach for the simulation of OLEDs based on a plane wave field expansion is proposed. Exact general formulae are given that allow for the calculation of their optical characteristics including losses in all layers in an arbitrary OLED structure. The S-matrix approach is used which ensures numerical stability of the algorithm. A simple way is proposed to take into consideration non-coherent reflections in a thick substrate. The validity of the model is demonstrated by comparing with experimental data. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：654 / 659
页数：6
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