Optimization of Functional Parameters of Magnetoresistive Fe20Ni80/Fe50Mn50/Fe20Ni80 Films

被引：0
|
作者：
Yuvchenko, Alexander A. [1 ]
Lepalovskij, Vladimir N. [1 ]
Savin, Peter A. [1 ]
Gorkovenko, Alexander N. [1 ]
Kulesh, Nikita A. [1 ]
Vas'kovskiy, Vladimir O. [1 ]
机构：
[1] Ural Fed Univ, Dept Magnetism & Magnet Nanomat, Ekaterinburg 620002, Russia
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2015年 / 51卷 / 01期
关键词：
Anisotropic magnetoresistance (AMR); exchange bias; magnetic films; magnetic sensors;
D O I：
10.1109/TMAG.2014.2362817
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the effect of some technological and physical factors on properties of SiO2/Ta/Fe20Ni80/Fe50Mn50 and SiO2/Ta/Fe20Ni80/Fe50Mn50/Fe20Ni80/Ta films, having the anisotropic magnetoresistance (AMR) effect, was investigated. The purpose of this paper was to find the optimum conditions for realization of the peak magnetic biasing in thick (>30 nm) permalloy layers. Essential influence of the protective Ta layer on the achievement of the optimal combination of properties of multilayer AMR films with exchange coupling is shown. Dependences of the exchange bias field (H-ex) and maximum derivation of resistance with respect to magnetic field (dR/dH)(max) on the thickness of functional permalloy layers are investigated. The preproduction prototypes of a sensor are produced and sensor transformation function is investigated.
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页数：4
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