Two-dimensional semimetal in HgTe-based quantum wells

被引:19
|
作者
Kvon, Z. D. [1 ,2 ]
Olshanetsky, E. B. [1 ]
Kozlov, D. A. [1 ]
Novik, E. [3 ]
Mikhailov, N. N. [1 ]
Dvoretsky, S. A. [1 ]
机构
[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 6300090, Russia
[2] Novosibirsk State Univ, Novosibirsk 6300090, Russia
[3] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany
关键词
RANDOM MAGNETIC-FIELD; ELECTRON-GAS; BAND;
D O I
10.1063/1.3573648
中图分类号
O59 [应用物理学];
学科分类号
摘要
The first results are reported from a study of a new two-dimensional electron system, a two-dimensional semimetal, that is observed in wide quantum wells based on mercury telluride, which have an inverted band spectrum. Magnetotransport experiments confirm the existence of a semimetal state in quantum wells with (013) and (112) orientations and thicknesses of 18-21 nm. These experiments show that the band overlap Delta = 3-5 meV. A comparison of the experimentally determined Delta with a theoretical calculation of the energy spectrum reveals the fundamental role of strain effects in the formation of the semimetal state. Scattering processes in the two-dimensional semimetal are studied and it is found that the jump in the electron mobility during electronic metal-two-dimensional semimetal transitions is caused by shielding of electron scattering on impurities by holes. The substantial, anomalous rise in the resistivity of the two-dimensional semimetal with increasing temperature is caused by electron-hole scattering. This is the first observation of the direct effect of interparticle scattering (Landau mechanism) on the resistivity of metals. The properties of two-dimensional semimetals in the quantum Hall effect regime are examined. Primary attention is devoted to the observed suppression of strong localization under the conditions of the quantum Hall effect. It is shown that in a strong magnetic field the two-component electron-hole plasma has fundamentally different topological properties from those of an ordinary single-component (electron or hole) plasma. It is proposed that these lead to the appearance of an infinite set of conducting current states and to the suppression of localization. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573648]
引用
收藏
页码:202 / 209
页数:8
相关论文
共 50 条
  • [31] Transmission Spectra of HgTe-Based Quantum Wells and Films in the Far-Infrared Range
    Savchenko, M. L.
    Vasil'ev, N. N.
    Yaroshevich, A. S.
    Kozlov, D. A.
    Kvon, Z. D.
    Mikhailov, N. N.
    Dvoretskii, S. A.
    PHYSICS OF THE SOLID STATE, 2018, 60 (04) : 778 - 782
  • [32] Electro-physical characteristics of MIS structures with HgTe-based single quantum wells
    Dzyadukh, S.
    Nesmelov, S.
    Voitsekhovskii, A.
    Gorn, D.
    17TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB/2014), 2015, 661
  • [33] Transmission Spectra of HgTe-Based Quantum Wells and Films in the Far-Infrared Range
    M. L. Savchenko
    N. N. Vasil’ev
    A. S. Yaroshevich
    D. A. Kozlov
    Z. D. Kvon
    N. N. Mikhailov
    S. A. Dvoretskii
    Physics of the Solid State, 2018, 60 : 778 - 782
  • [34] Multiple crossings of Landau levels of two-dimensional fermions in double HgTe quantum wells
    Gusev, G. M.
    Olshanetsky, E. B.
    Hernandez, F. G. G.
    Raichev, O. E.
    Mikhailov, N. N.
    Dvoretsky, S. A.
    PHYSICAL REVIEW B, 2021, 103 (03)
  • [35] Manifestation of a semimetallic state in cyclotron resonance in low-symmetry HgTe-based quantum wells
    A. A. Greshnov
    Yu. B. Vasil’ev
    N. N. Mikhailov
    G. Yu. Vasil’eva
    D. Smirnov
    JETP Letters, 2013, 97 : 102 - 106
  • [36] Manifestation of a semimetallic state in cyclotron resonance in low-symmetry HgTe-based quantum wells
    Greshnov, A. A.
    Vasil'ev, Yu. B.
    Mikhailov, N. N.
    Vasil'eva, G. Yu.
    Smirnov, D.
    JETP LETTERS, 2013, 97 (02) : 102 - 106
  • [37] Dynamical Dielectric Function of 2DEG in HgTe-based Quantum Wells in RPA Formalism
    Melezhik, E. O.
    Gumenjuk-Sichevska, J. V.
    Dvoretsky, S. A.
    Mikhailov, N. N.
    PROCEEDINGS OF THE 2017 IEEE 7TH INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATION & PROPERTIES (NAP), 2017,
  • [38] Photo- and Thermoelectric Phenomena in Two-Dimensional Topological Insulators and Semimetals Based on HgTe Quantum Wells (Scientific Summary)
    Kvon, Z. D.
    Savchenko, M. L.
    Kozlov, D. A.
    Olshanetsky, E. B.
    Yaroshevich, A. S.
    Mikhailov, N. N.
    JETP LETTERS, 2020, 112 (03) : 161 - 172
  • [39] Photo- and Thermoelectric Phenomena in Two-Dimensional Topological Insulators and Semimetals Based on HgTe Quantum Wells (Scientific Summary)
    Z. D. Kvon
    M. L. Savchenko
    D. A. Kozlov
    E. B. Olshanetsky
    A. S. Yaroshevich
    N. N. Mikhailov
    JETP Letters, 2020, 112 : 161 - 172
  • [40] Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices
    Dzyadukh, S.
    Nesmelov, S.
    Voitsekhovskii, A.
    Gorn, D.
    INTERNATIONAL CONFERENCE OF YOUNG SCIENTISTS AND SPECIALISTS OPTICS-2015, 2016, 735