Electron-electron interaction effect on conductivities in cobalt thin films

被引:0
|
作者
Yakabe, T
Terai, Y
Yasuzuka, S
Terakura, C
Terashima, T
Uji, S
Fujita, D
Kido, G
机构
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050003, Japan
[2] Hokkaido Univ, Kita Ku, Sapporo, Hokkaido 0600810, Japan
关键词
electron-electron interaction; localization; percolation;
D O I
10.1016/S0921-4526(02)02461-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have measured the temperature (T) dependence of the conductivity of cobalt films with various thickness (d). The conductivity shows In T dependence for d < 100 Angstrom, which is mainly caused by electron-electron interaction effect. The coefficient of the In T dependence significantly decreases with decreasing thickness for d < 50 Angstrom, where the conductivity approaches Mooij limit. The results suggest that the scattering for d < 50 Angstrom is dominated by the inhomogeneity of the films such as grain boundaries. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1111 / 1112
页数:2
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