High Rejection Low-Pass-Filter Design Using Integrated Passive Device Technology for Chip-Scale Module Package

被引:3
|
作者
Lee, YongTaek [1 ]
Liu, Kai [2 ]
Frye, Robert [3 ]
Kim, HyunTai [1 ]
Kim, Gwang [1 ]
Ahn, Billy [1 ]
机构
[1] STATS ChipPAC Ltd, San 136-1 Ami Ri, Ichon 467701, Kyonggi Do, South Korea
[2] STATS ChipPAC Inc, Tempe, AZ 85284 USA
[3] RF Design Consulting LLC, Piscataway, NJ 08855 USA
来源
2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2010年
关键词
D O I
10.1109/ECTC.2010.5490664
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. These devices are receiving increased attention for developing front-end-module (FEM) applications in mobile communication systems. This paper discusses the design of low pass filters (LPF) for use in the GHz range with high harmonic rejection. In large modules, these filters make use of co-planar ground planes and lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). The use of coplanar ground in such modules introduces unique performance constraints, especially in filters requiring high harmonic rejection. These problems are discussed, along with design approaches to help mitigate them.
引用
收藏
页码:2025 / 2030
页数:6
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