nanodiamonds;
carbon materials;
electron field emission;
D O I:
10.1016/j.diamond.2004.10.022
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The electron field emission properties of carbon nanotubes (CNTs) formed by catalyst-assisted solid-state growth process from nanodiamond films were investigated. The SEM and Raman spectroscopy examinations show that the nanodiamond films were converted into carbon nanotubes when they were coated with a thin layer of Fe, Co or Ni films (similar to 1.0 nm) and then postannealed at high enough temperature (similar to 1000 degrees C). Precoating a catalytic metal layer is of prime importance to induce the phase transformation process. The field emission properties of nanodiamond films have been dramatically improved. The turn on field was reduced from E-Dia = 36-44 V/mu m for nanodiamond films to E-CNTs = 11 to 16 V/mu m, whereas the electron field emission capacity was increased from J(e(Dia)) = 110 mu A/cm(2) for nanodiamond films to J(e(CNTs)) = 30 mA/cm(2) after the conversion process. The electron field emission of the solid-state converted CNTs thus obtained are superior to those of the CNTs grown from CVD process due to the suppression of carbon soots formation. (c) 2004 Elsevier B.V. All rights reserved.
机构:
Indian Inst Technol, Dept Chem Engn, Creat & Adv Res Based Nanomat CARBON Lab, Kandi 502285, Telangana, IndiaIndian Inst Technol, Dept Chem Engn, Creat & Adv Res Based Nanomat CARBON Lab, Kandi 502285, Telangana, India
Araga, Ramya
Kali, Suresh
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机构:
Indian Inst Technol, Dept Chem Engn, Creat & Adv Res Based Nanomat CARBON Lab, Kandi 502285, Telangana, IndiaIndian Inst Technol, Dept Chem Engn, Creat & Adv Res Based Nanomat CARBON Lab, Kandi 502285, Telangana, India
Kali, Suresh
Sharma, Chandra S.
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机构:
Indian Inst Technol, Dept Chem Engn, Creat & Adv Res Based Nanomat CARBON Lab, Kandi 502285, Telangana, IndiaIndian Inst Technol, Dept Chem Engn, Creat & Adv Res Based Nanomat CARBON Lab, Kandi 502285, Telangana, India
机构:
Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USAUniv Puerto Rico, Dept Phys, San Juan, PR 00931 USA
Zhang, H. X.
Feng, P. X.
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机构:
Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
Donghua Univ, Dept Phys, Shanghai 200051, Peoples R ChinaUniv Puerto Rico, Dept Phys, San Juan, PR 00931 USA
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Shen, LH
Zhang, XB
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, XB
Li, Y
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机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Li, Y
Yang, XF
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Yang, XF
Luo, JH
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Luo, JH
Xu, GL
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机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China