III-Nitride Photonics

被引：158
|
作者：
Tansu, Nelson [1 ]
Zhao, Hongping [1 ]
Liu, Guangyu [1 ]
Li, Xiao-Hang [1 ]
Zhang, Jing [1 ]
Tong, Hua [1 ]
Ee, Yik-Khoon [1 ]
机构：
[1] Lehigh Univ, Ctr Opt Technol, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
来源：
IEEE PHOTONICS JOURNAL | 2010年 / 2卷 / 02期
基金：
美国国家科学基金会;
关键词：
III-Nitride; photonics; light-emitting diodes; lasers; solid state lighting; nanotechnology; energy; thermoelectric; photodetector; terahertz; intersubband quantum well; LIGHT-EMITTING-DIODES; QUANTUM-WELL LASERS; 0.77 EV INN; GROWTH; EFFICIENCY; MOVPE; PHOTOLUMINESCENCE; GAN/SAPPHIRE; PERFORMANCE;
D O I：
10.1109/JPHOT.2010.2045887
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics research is a very active field with many important applications in the areas of energy, biosensors, laser devices, and communications. The applications of nitride semiconductors in energy-related technologies include solid-state lighting, solar cells, thermoelectric, and power electronics. Several new research areas in III-Nitride photonics related to terahertz photonics, intersubband quantum wells, nanostructures, and other devices are discussed.
引用
收藏
页码：241 / 248
页数：8
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