An extensive study on the structural evolution and gamma radiation stability of TeO2 thin films

被引：8
|
作者：
Sudha, A. [1 ]
Maity, T. K. [1 ]
Sharma, S. L. [1 ,2 ]
Gupta, A. N. [1 ]
机构：
[1] Indian Inst Technol Kharagpur, Dept Phys, Kharagpur 721302, W Bengal, India
[2] KIIT Univ, Sch Elect Engn, Bhubaneswar 751024, Orissa, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2018年 / 74卷
关键词：
TeO2; Structure; Gamma radiation sensing; Sensitivity; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; TEMPERATURE; TIME;
D O I：
10.1016/j.mssp.2017.10.018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of post deposition thermal annealing on the structure and gamma radiation sensing properties of thermally evaporated TeO2 thin films was studied. The as-deposited films showed amorphous nature, the crystallization into the mixed phase (tetragonal and orthorhombic) occurs on annealing at 350 degrees C and the crystallization into the pure tetragonal structure occurs at higher annealing temperatures. The grain size in the TeO2 films grew with the increase in annealing temperature. Among the thin films investigated, the films annealed at 150 degrees C showed the highest response and sensitivity to gamma radiation. The results also indicate the significance of the post deposition thermal annealing up to the temperature of 150 degrees C in improving the gamma radiation sensing properties of the TeO2 films.
引用
收藏
页码：347 / 351
页数：5
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